(China (Mainland))
Product Summary
The BC857B is a PNP general purpose transistor designed for general purpose switching and amplification.
Parametrics
BC857B limiting values: (1)VCBO, collector-base voltage at open emitter: -50v max; (2)VCEO, collector-emitter voltage at open base: -45V max; (3)VEBO, emitter-base voltage at open collector: -5V max; (4)IC, collector current (DC): -100mA max; (5)ICM, peak collector current: -200mA max; (6)IBM, peak base current: -200mA max; (7)Ptot, total power dissipation at Tamb ≤ 25 ℃: 250mW max; (8)Tstg, storage temperature: -65 to +150℃; (9)Tj, junction temperature: 150℃ max; (10)Tamb, operating ambient temperature: -65 to +150℃.
Features
BC857B features: (1)low current (max. 100 mA); (2)low voltage (max. 65 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BC857B |
Taiwan Semiconductor |
Transistors Bipolar (BJT) 1500W 20V 5% UNI TRANSZORB-TVS |
Data Sheet |
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BC857B /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-11 |
Data Sheet |
Negotiable |
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 |
BC857B-7 |
Diodes Inc. |
Transistors Bipolar (BJT) PNP BIPOLAR |
Data Sheet |
Negotiable |
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BC857BDW1T1 |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V Dual PNP |
Data Sheet |
Negotiable |
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BC857BDW1T1G |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V Dual PNP |
Data Sheet |
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BC857BLP4-7 |
Diodes Inc. |
Transistors Bipolar (BJT) 250mW -45V |
Data Sheet |
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BC857BS-13-F |
Diodes Inc. |
Diodes (General Purpose, Power, Switching) NPN Small SIG -50V -45V VCEO 6.0V VEBO |
Data Sheet |
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BC857BMTF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 PNP GP AMP |
Data Sheet |
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