Product Summary

The BC857B is a PNP general purpose transistor designed for general purpose switching and amplification.

Parametrics

BC857B limiting values: (1)VCBO, collector-base voltage at open emitter: -50v max; (2)VCEO, collector-emitter voltage at open base: -45V max; (3)VEBO, emitter-base voltage at open collector: -5V max; (4)IC, collector current (DC): -100mA max; (5)ICM, peak collector current: -200mA max; (6)IBM, peak base current: -200mA max; (7)Ptot, total power dissipation at Tamb ≤ 25 ℃: 250mW max; (8)Tstg, storage temperature: -65 to +150℃; (9)Tj, junction temperature: 150℃ max; (10)Tamb, operating ambient temperature: -65 to +150℃.

Features

BC857B features: (1)low current (max. 100 mA); (2)low voltage (max. 65 V).

Diagrams

BC857B outline and symbol

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BC857B
BC857B

Taiwan Semiconductor

Transistors Bipolar (BJT) 1500W 20V 5% UNI TRANSZORB-TVS

Data Sheet

0-3000: $0.01
3000-6000: $0.01
BC857B /T3
BC857B /T3

NXP Semiconductors

Transistors Bipolar (BJT) TRANS GP TAPE-11

Data Sheet

Negotiable 
BC857B-7
BC857B-7

Diodes Inc.

Transistors Bipolar (BJT) PNP BIPOLAR

Data Sheet

Negotiable 
BC857BDW1T1
BC857BDW1T1

ON Semiconductor

Transistors Bipolar (BJT) 100mA 50V Dual PNP

Data Sheet

Negotiable 
BC857BDW1T1G
BC857BDW1T1G

ON Semiconductor

Transistors Bipolar (BJT) 100mA 50V Dual PNP

Data Sheet

0-1: $0.16
1-25: $0.10
25-100: $0.08
100-500: $0.04
BC857BLP4-7
BC857BLP4-7

Diodes Inc.

Transistors Bipolar (BJT) 250mW -45V

Data Sheet

0-1: $0.24
1-10: $0.19
10-100: $0.13
100-500: $0.09
BC857BS-13-F
BC857BS-13-F

Diodes Inc.

Diodes (General Purpose, Power, Switching) NPN Small SIG -50V -45V VCEO 6.0V VEBO

Data Sheet

0-1: $0.21
1-10: $0.19
10-100: $0.11
100-250: $0.07
BC857BMTF
BC857BMTF

Fairchild Semiconductor

Transistors Bipolar (BJT) SOT-23 PNP GP AMP

Data Sheet

0-1: $0.04
1-25: $0.03
25-100: $0.03
100-250: $0.02