Product Summary
This integrated circuit ISO124P can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage of the ISO124P can range from subtle performance degradation to complete device failure. Precision integrated circuit ISO124P may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Parametrics
ISO124P absolute maximum ratings: (1)Supply Voltage: ±18V; (2)VIN: ±100V; (3)Continuous Isolation Voltage: 1500Vrms; (4)Junction Temperature: +150℃; (5)Storage Temperature: +85℃; (6)Lead Temperature (soldering, 10s): +300℃; (7)Output Short to Common: Continuous.
Features
ISO124P features: (1)100% tested for high-voltage breakdown; (2)Rated 1500Vrms; (3)High IMR: 140dB at 60Hz; (4)0.010% max nonlinearity; (5)Bipolar operation: VO = ±10V; (6)16-pin plastic dip and 28-lead SOIC; (7)Ease of use: Fixed unity gain configuration; (8)±4.5V to ±18V supply range.
Diagrams
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ISO124P |
Texas Instruments |
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