(China (Mainland))
Product Summary
The SST202 is an N-Channel JFET. The device features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. The SST202 is excellent for battery powered equipment and low current amplifiers. The J series, TO-226 (TO-92) plastic package, provides low cost, while the SST series, TO-236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly. The applications of the SST202 include High-Gain, Low-Noise Amplifiers, Low-Current, Low-Voltage Battery-Powered Amplifiers, Infrared Detector Amplifiers, Ultra High Input Impedance Pre-Amplifiers.
Parametrics
SST202 absolute maximum ratings: (1)Gate-Drain, Gate-Source Voltage: 40 V; (2)Gate Current: 50 mA; (3)Lead Temperature (1/16” from case for 10 sec.): 300℃; (4)Storage Temperature: -55 to 150℃; (5)Operating Junction Temperature: -55 to 150℃; (6)Power Dissipationa: 350 mW.
Features
SST202 features: (1)Low Cutoff Voltage: J201 <1.5 V; (2)High Input Impedance; (3)Very Low Noise; (4)High Gain: AV = 80 @ 20 μA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SST202 |
Vishay/Siliconix |
JFET 40V 0.8mA |
Data Sheet |
Negotiable |
|
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|
SST202-E3 |
Vishay/Siliconix |
JFET 40V 0.8mA |
Data Sheet |
Negotiable |
|
||||
|
SST202-T1-E3 |
Vishay/Siliconix |
JFET 40V 0.8mA |
Data Sheet |
Negotiable |
|
||||
|
SST202-T1 |
Vishay/Siliconix |
JFET 40V 0.8mA |
Data Sheet |
Negotiable |
|
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