(China (Mainland))
Product Summary
The BAS16HT1G is a Switching Diode.
Parametrics
BAS16HT1G absolute maximum ratings: (1)Continuous Reverse Voltage, VR: 75 Vdc; (2)Peak Forward Current, IF: 200 mAdc; (3)Peak Forward Surge Current, IFM(surge): 500 mAdc.
Features
BAS16HT1G features: (1)Reverse Voltage Leakage Current (VR = 75 Vdc), IR: 1.0μAdc; (2)Reverse Breakdown Voltage (IBR = 100 mAdc), V(BR): 75Vdc; (3)Forward Voltage, VF: 715mV; (4)Diode Capacitance (VR = 0, f = 1.0 MHz), CD: 2.0 pF; (5)Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns), VFR: 1.75Vdc; (6)Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W), trr: 6.0ns; (7)Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W), QS: 45pC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BAS16HT1G |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 75V 200mA |
Data Sheet |
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