(China (Mainland))
Product Summary
The BC847B is an NPN general purpose transistor. It is in a SOT23 plastic package. The device is designed for general purpose switching and amplification.
Parametrics
BC847B absolute maximum ratings: (1)VCBO collector-base voltage: 50 V; (2)VCEO collector-emitter voltage: 45 V; (3)VEBO emitter-base voltage: 6 V; (4)IC collector current (DC): 100 mA; (5)ICM peak collector current: 200 mA; (6)IBM peak base current: 200 mA; (7)Ptot total power dissipation: 250 mW; (8)Tstg storage temperature: -65 to +150 ℃; (9)Tj junction temperature: 150 ℃; (10)Tamb operating ambient temperature: -65 to +150 ℃.
Features
BC847B features: (1)Low current (max. 100 mA); (2)Low voltage (max. 65 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BC847B |
Taiwan Semiconductor |
Transistors Bipolar (BJT) 1500W 20V 5% UNI TRANSZORB-TVS |
Data Sheet |
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BC847B /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
Negotiable |
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 |
BC847B_L99Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GP AMP |
Data Sheet |
Negotiable |
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BC847B-13-F |
Diodes Inc. |
Diodes (General Purpose, Power, Switching) NPN Small SIG 50V 45V VCEO 6.0V VEBO |
Data Sheet |
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BC847B-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) NPN BIPOLAR |
Data Sheet |
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BC847BDW1T1 |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V Dual NPN |
Data Sheet |
Negotiable |
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BC847BDW1T1G |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V Dual NPN |
Data Sheet |
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BC847BDW1T3G |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V Dual NPN |
Data Sheet |
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