M29W640GT70NA6E

64 Mbit non-volatile memory, 64MB, 3V, 70NS, 48TSOP, M29W640GT70NA6E

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Price:: US $1.35~1.42 / piece [Get Latest Price]

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PartNumber:: M29W640GT70NA6E

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 11+

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Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-03-28

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Part Number:M29W640GT70NA6E
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Product Summary

The M29W640GT70NA6E is a 64 Mbit non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The M29W640GT70NA6E is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. The M29W640GT70NA6E is organized into 128 uniform Blocks of 64 Kbytes each (or 32 Kwords each).

Parametrics

M29W640GT70NA6E absolute maximum ratings: (1)TBIAS Temperature Under Bias: –50 to 125 ℃; (2)TSTG Storage Temperature: –65 to 150 ℃; (3)VIO Input or Output Voltage: –0.6 to VCC +0.6 V; (4)VCC Supply Voltage: –0.6 to 4 V; (5)VID Identification Voltage: –0.6 to 13.5 V; (6)VPP Program Voltage: –0.6 to 13.5 V.

Features

M29W640GT70NA6E features: (1)Supply Voltage: VCC = 2.7 to 3.6 V for Program/Erase/Read; VPP =12 V for Fast Program (optional); (2)Asynchronous Random/Page Read: Page Width: 4 words; Page Access: 25 ns; Random Access: 60 ns, 70 ns, 90 ns; (3)Fast Program commands: 2 word/4 byte Program (without VPP=12 V); 4 word/8 byte Program (with VPP=12 V); 16 word/32 byte Write Buffer; (4)Programming time: 10 μs per byte/word typical; Chip Program time: 10 s (4-word Program); (5)Low power consumption:Standby and Automatic Standby; (6)Unlock Bypass Program command: Faster Production/Batch Programming; (7)Common Flash Interface: 64-bit Security Code; (8)VPP/WP pin for Fast Program and Write Protect; (9)Temporary Block Unprotection mode; (10)100,000 Program/Erase cycles per block.