FZ1200R12KF4

Product Summary

The FZ1200R12KF4 is a new device from European Power-semiconductor and Electronics Company. The collector-emitter voltage of VCES is 1200V, and the DC-collector current(IC) is 1200A. The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.

Parametrics

Absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC: 1200A; (3)repetitive peak collctor current tp=1 ms, ICRM: 2400A; (4)total power dissipation tC=25°C, Transistor /transistor, Ptot: 7800W; (5)gate-emitter peak voltage, VGE: ±20V; (6)DC forward current, IF: 1200A; (7)repetitive peak forw. current tp=1ms, IFRM: 2400A; (8)insulation test voltage RMS, f=50 Hz, t= 1 min, VISOL: 2,5kV.

Features

Characteristic: (1)collector-emitter saturation voltage, iC=1,2kA, vGE=15V, tvj=25°C vCE sat: -2,7 to 3,2V; (2)collector-emitter saturation voltage, iC=1,2kA, vGE=15V, tvj=125°C: -3,3 to 3,9V; (3)gate threshold voltage iC=48mA, vCE=vGE, tvj=25°C,vGE(th): 4,5 to 6,5V, and the typ is 5,5V ; (4)input capacity fO=1MHz,tvj=25°C,vCE=25V, vGE=0V, Cies: -90nF; (5)collector-emitter cut-off current, vCE=1200V, vGE=0V, tvj=25°C iCES - 16 - mA; (6)collector-emitter cut-off current, vCE=1200V, vGE=0V, tvj=125°C - 100 200 mA; (7)gate leakage current, vCE=0V, vGE=20V, tvj=25°C, iGES: 400 nA; (8)Emitter-Gate Reststrom gate leakage current, vCE=0V, vEG=20V, tvj=25°C, iEGS: 400nA; (9)turn-on time (inductive load), iC=1,2kA,vCE=600V ton, vL = ±15V, RG= 0,82 , tvj=25°: 0,7μs; (10)turn-on time (inductive load), iC=1,2kA,vCE=600V ton, vL = ±15V, RG= 0,82 , tvj=125°: 0,8μs; (11)storage time (inductive load) iC=1,2kA,vCE=600V ts, vL = ±15V, RG= 0,82 , tvj=25° - 0,9 - μs; (12)storage time iC=1,2kA,vCE=600V ts, vL = ±15V, RG= 0,82 , tvj=125° - 1,0 - μs; (13)fall time (inductive load) iC=1,2kA,vCE=600V, tf, vL = ±15V, RG= 0,82 , tvj=25°: 0,10μs; (14)fall time (inductive load) iC=1,2kA,vCE=600V, tf, vL = ±15V, RG= 0,82 , tvj=125°: 0,15μs.

Diagrams