Product Summary
The BC817-40W is an NPN transistor in a SOT23 plastic package.
Parametrics
BC817-40W absolute maximum ratings: (1)collector-base voltage: 50 V; (2)collector-emitter voltage: 45 V; (3)emitter-base voltage: 5 V; (4)collector current (DC): 500 mA; (5)peak collector current: 1 A; (6)peak base current: 200 mA; (7)total power dissipation: 250 mW; (8)storage temperature: -65 +150 ℃; (9)junction temperature: +150 ℃; (10)operating ambient temperature: -65 +150 ℃.
Features
BC817-40W features: (1)Low current (max. 100 mA); (2)Low voltage (max. 40 V).
Diagrams
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![]() BC817-40W |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BC817-40W,115 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) NPN 45V 500mA |
![]() Data Sheet |
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![]() BC817-40W,135 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS GP TAPE-11 |
![]() Data Sheet |
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![]() BC817-40W-7 |
![]() Diodes Inc. |
![]() Transistors Bipolar (BJT) NPN SURFACE MOUNT SMALL SIGNAL TRANS |
![]() Data Sheet |
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